KSM12N60NZ / ksmf12n60nz n-channel unifet tm ii mosfet ? 600 v, 12 a, 650 m ? features ?r ds(on) = 530 m ? (typ.) @ v gs = 10 v, i d = 6 a ? low gate charge ( typ. 26 nc) ? low c rss ( typ. 12 pf) ? 100% avalanche tested ? improved dv/dt capability ? esd improved capability ? rohs compliant applications ? lcd/led/pdp tv ? lighting ? uninterruptible power supply description unifet tm ii mosfet is kersemi semiconductor ? ?s high volt- age mosfet family based on advanced planar stripe and dmos technology. this advanc ed mosfet family has the smallest on-state resistance among the planar mosfet, and also provides superior switching performance and higher ava- lanche energy strength. in addition, internal gate-source esd diode allows unifet ii mosfet to withstand over 2kv hbm surge stress. this device family is suitable for switching power converter applications such as powe r factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter KSM12N60NZ ksmf12n60nz unit v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current - continuous (t c = 25 o c) 12 12* a - continuous (t c = 100 o c) 7.2 7.2* i dm drain current - pulsed (note 1) 48 48* a e as single pulsed avalanche energy (note 2) 565 mj i ar avalanche current (note 1) 12 a e ar repetitive avalanche energy (note 1) 24 mj dv/dt mosfet dv/dt ruggedness 20 v/ns peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 240 39 w - derate above 25 o c2.00.3w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter KSM12N60NZ ksmf12n60nz unit r ? jc thermal resistance, junction to case, max. 0.52 3.2 o c/w r ? cs thermal resistance, case to sink typ. 0.5 - r ? ja thermal resistance, junction to ambient, max. 62.5 62.5 *drain current limited by maximum junction temperature g s d g s d to-220f to-220 2014-7-1 1 www.kersemi.com
t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity KSM12N60NZ KSM12N60NZ to-220 - - 50 ksmf12n60nz ksmf12n60nz to-220f - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 600 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 1 ? a v ds = 480v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 10 ? a v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3-5v r ds(on) static drain to source on resistance v gs = 10v, i d = 6a - 0.53 0.65 ? g fs forward transconductance v ds = 20v, i d = 6a - 13.5 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1260 1676 pf c oss output capacitance - 150 200 pf c rss reverse transfer capacitance - 12 18 pf q g(tot) total gate charge at 10v v ds = 480v, i d = 12a v gs = 10v (note 4) -2634nc q gs gate to source gate charge - 6 - nc q gd gate to drain ?miller? charge - 10 - nc t d(on) turn-on delay time v dd = 300v, i d = 12a r g = 25 ? (note 4) -2560ns t r turn-on rise time - 50 110 ns t d(off) turn-off delay time - 80 170 ns t f turn-off fall time - 60 130 ns i s maximum continuous drain to source diode forward current - - 12 a i sm maximum pulsed drain to source diode forward current - - 48 a v sd drain to source diode forward voltage v gs = 0v, i sd = 12a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 12a di f /dt = 100a/ ? s - 350 - ns q rr reverse recovery charge - 2.2 - ? c notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l =7.85mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25c 3: i sd ?? 12a, di/dt ?? 200a/ ? s, v dd ?? bv dss , starting t j = 25c 4: essentially independent of operating temperature typical characteristics 2014-7-1 2 www.kersemi.com package marking and ordering information KSM12N60NZ / ksmf12n60nz
typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 0.1 1 10 30 *notes: 1. 250 ? s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 345678 0.1 1 10 100 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 ? s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 5 10 15 20 25 30 0.5 0.6 0.7 0.8 0.9 1.0 * note : t j = 25 o c v gs = 20v v gs = 10v r ds ( on ) [ ? ] , drain-source on-resistance i d , drain current [a] 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 10 100 1000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 6 12 18 24 30 0 2 4 6 8 10 * note : i d = 12a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] KSM12N60NZ / ksmf12n60nz 2014-7-1 3 www.kersemi.com
typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs temperature figure 9. maximum safe operating area figure 10. maximum safe operating area -fdpf12n60nz -fdp12n60nz -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250ua bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 6a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 30 ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 1 10 100 1000 0.01 0.1 1 10 100 10 ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 3 6 9 12 15 i d , drain current [a] t c , case temperature [ o c ] figure 11. maximum drain current vs case temperature KSM12N60NZ / ksmf12n60nz 2014-7-1 4 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 10 3 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z ? jc (t) = 0.52 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 10 3 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z ? jc (t) = 3.2 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] 5 figure 12. transient thermal response curve -fdpf12n60nz t 1 p dm t 2 figure 13. transient thermal response curve -fdp12n60nz t 1 p dm t 2 KSM12N60NZ / ksmf12n60nz 2014-7-1 5 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms KSM12N60NZ / ksmf12n60nz 2014-7-1 6 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSM12N60NZ / ksmf12n60nz 2014-7-1 7 www.kersemi.com
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